Selective-area growth of GaN nanowires on SiO 2 -masked Si (111) substrates by molecular beam epitaxy
Kruse, J. E., Lymperakis, L., Eftychis, S., Adikimenakis, A., Doundoulakis, G., Tsagaraki, K., Androulidaki, M., Olziersky, A., Dimitrakis, P., Ioannou-Sougleridis, V., Normand, P., Koukoula, T., KehaVolume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4953594
Date:
June, 2016
File:
PDF, 1.93 MB
english, 2016