Role of deposition and annealing of the top gate dielectric in a-IGZO TFT-based dual-gate ion-sensitive field-effect transistors
Kumar, Narendra, Sutradhar, Moitri, Kumar, Jitendra, Panda, SiddharthaVolume:
32
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aa5584
Date:
March, 2017
File:
PDF, 1.10 MB
english, 2017