Depth profile study of Ti implanted Si at very high doses

Depth profile study of Ti implanted Si at very high doses

Olea, J., Pastor, D., Toledano-Luque, M., Mártil, I., González-Díaz, G.
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Volume:
110
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3626466
Date:
September, 2011
File:
PDF, 2.51 MB
english, 2011
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