Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 09 Vol. 33; Iss. 5
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Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Liu, Lining, Choi, Hoi Wai, Lai, Pui To, Xu, JingpingVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4927483
Date:
September, 2015
File:
PDF, 1.25 MB
english, 2015