The thickness design of unintentionally doped GaN...

AIP Advances 2016 / 03 Vol. 6; Iss. 3

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Chen, P., Zhao, D. G., Jiang, D. S., Zhu, J. J., Liu, Z. S., Yang, J., Li, X., Le, L. C., He, X. G., Liu, W., Li, X. J., Liang, F., Zhang, B. S., Yang, H., Zhang, Y. T., Du, G. T.
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Volume:
6
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4945015
Date:
March, 2016
File:
PDF, 2.82 MB
english, 2016
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