Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 09 Vol. 33; Iss. 5
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Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors
Lv, Ling, Ma, Xiaohua, Xi, He, Liu, Linyue, Cao, Yanrong, Zhang, Jincheng, Shan, Hengsheng, Hao, YueVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4929544
Date:
September, 2015
File:
PDF, 1.04 MB
english, 2015