Increased doping depth of Al in wet-chemical laser doping...

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Materials Science in Semiconductor Processing 2016 / 12

Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse

Ikeda, Akihiro, Marui, Daichi, Sumina, Rikuho, Ikenoue, Hiroshi, Asano, Tanemasa
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Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.11.036
Date:
December, 2016
File:
PDF, 554 KB
english, 2016
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