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Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs
Chen, YongHe, Ma, XiaoHua, Chen, WeiWei, Hou, Bin, Zhang, JinCheng, Hao, YueVolume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4931454
Date:
September, 2015
File:
PDF, 1.44 MB
english, 2015