Dependence of reverse bias leakage on depletion width and...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2015 / 11 Vol. 33; Iss. 6

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Kum, Hyun, Kim, Mihyun, Lee, Dong-gun, Tak, Youngjo, Maeng, Jongsun, Kim, Joosung, Gu, Gilho, Kim, Joong Jung, Kim, Yongil, Kim, Jun-Youn, Park, Youngsoo
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Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4933039
Date:
November, 2015
File:
PDF, 841 KB
english, 2015
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