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Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
Alevli, Mustafa, Haider, Ali, Kizir, Seda, Leghari, Shahid A., Biyikli, NecmiVolume:
34
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4937725
Date:
January, 2016
File:
PDF, 2.24 MB
english, 2016