Growth and characterization of molecular beam epitaxy-grown...

Journal of Applied Physics 2016 / 02 Vol. 119; Iss. 5

Growth and characterization of molecular beam epitaxy-grown Bi 2 Te 3−x Se x topological insulator alloys

Tung, Y., Chiang, Y. F., Chong, C. W., Deng, Z. X., Chen, Y. C., Huang, J. C. A., Cheng, C.-M., Pi, T.-W., Tsuei, K.-D., Li, Z., Qiu, H.
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Volume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4941018
Date:
February, 2016
File:
PDF, 1.46 MB
english, 2016
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