Evolution of planar defects during homoepitaxial growth of β -Ga 2 O 3 layers on (100) substrates—A quantitative model
Schewski, R., Baldini, M., Irmscher, K., Fiedler, A., Markurt, T., Neuschulz, B., Remmele, T., Schulz, T., Wagner, G., Galazka, Z., Albrecht, M.Volume:
120
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4971957
Date:
December, 2016
File:
PDF, 2.66 MB
english, 2016