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Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy
Nami, Mohsen, Eller, Rhett F, Okur, Serdal, Rishinaramangalam, Ashwin K, Liu, Sheng, Brener, Igal, Feezell, Daniel FVolume:
28
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/28/2/025202
Date:
January, 2017
File:
PDF, 3.71 MB
english, 2017