Bias Temperature Instability (BTI) in high-mobility channel...

MRS Advances 2016 Vol. 1; Iss. 49

Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Franco, J., Kaczer, B., Vais, A., Alian, A., Arimura, H., Putcha, V., Sioncke, S., Waldron, N., Zhou, D., Nyns, L., Mitard, J., Witters, L., Heyns, M., Groeseneken, G., Collaert, N., Linten, D., Thean
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Volume:
1
Year:
2016
Language:
english
Journal:
MRS Advances
DOI:
10.1557/adv.2016.387
File:
PDF, 1.26 MB
english, 2016
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