“Embedded Emitters”: Direct bandgap Ge nanodots within...

Journal of Applied Physics 2016 / 12 Vol. 120; Iss. 23

“Embedded Emitters”: Direct bandgap Ge nanodots within SiO 2

Kuo, M. H., Chou, S. K., Pan, Y. W., Lin, S. D., George, T., Li, P. W.
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Volume:
120
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4972219
Date:
December, 2016
File:
PDF, 1.67 MB
english, 2016
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