[IEEE 2016 IEEE International Conference on Electron...

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[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Improved reliability of high-voltage VDMOS with reduced mask layers through optimized edge termination (Device reliability)

Yeh, Jen-Hao, Tu, Yi-Rong, Tseng, Wan-Wen, Chuaug, Ming-Nan, Cheng, Pi-Feng, Chou, Chiung-Feng, Huang, Chih-Fang
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Year:
2016
DOI:
10.1109/EDSSC.2016.7785268
File:
PDF, 1018 KB
2016
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