[IEEE 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) - Sendai, Japan (2016.8.22-2016.8.25)] 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) - Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

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