Electrical characterization of a gate-recessed AlGaN/GaN...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2016 / 11 Vol. 34; Iss. 6

Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer

Hsueh, Kuang-Po, Chien, Feng-Tso, Peng, Li-Yi, Yang, Chih-Wei, Wang, Hou-Yu, Mai, Kai-Di, Chiu, Hsien-Chin
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Volume:
34
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4963897
Date:
November, 2016
File:
PDF, 916 KB
english, 2016
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