In situ analysis of post-annealing effect on...

Journal of Applied Physics 2016 / 11 Vol. 120; Iss. 20

In situ analysis of post-annealing effect on Sn-doped indium oxide films

Lim, Hojoon, Yang, Hyeok-Jun, Kim, Ji Woong, Bae, Jong-Seung, Kim, Jin-Woo, Jeong, Beomgyun, Crumlin, Ethan, Park, Sungkyun, Mun, Bongjin Simon
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Volume:
120
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4968010
Date:
November, 2016
File:
PDF, 729 KB
english, 2016
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