Nanometric Modelisation to Characterize Dynamics Carriers in a HEMT Heterostructure (AlGaAs/GaAs) Using an Effectif Doping
Bouneb, I., Kerrour, F.Volume:
644
Language:
english
Journal:
Key Engineering Materials
DOI:
10.4028/www.scientific.net/kem.644.26
Date:
May, 2015
File:
PDF, 343 KB
english, 2015