Effects of growth temperature on the properties of InGaN...

AIP Advances 2015 / 12 Vol. 5; Iss. 12

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

Zhang, Yachao, Zhou, Xiaowei, Xu, Shengrui, Wang, Zhizhe, Chen, Zhibin, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue
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Volume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4937127
Date:
December, 2015
File:
PDF, 2.78 MB
english, 2015
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