Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2016 / 09 Vol. 34; Iss. 5
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Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al 2 O 3 gate oxide
Ahn, Shihyun, Kim, Byung-Jae, Lin, Yi-Hsuan, Ren, Fan, Pearton, Stephen J., Yang, Gwangseok, Kim, Jihyun, Kravchenko, Ivan I.Volume:
34
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4959786
Date:
September, 2016
File:
PDF, 578 KB
english, 2016