[IEEE 2016 IEEE International Conference on Electron...

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[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A variation laterl doping layer and lightly doped region compensated superjunction LDMOS

Liang, Lixiao, Huang, Haimeng, Chen, Xingbi
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Year:
2016
DOI:
10.1109/EDSSC.2016.7785224
File:
PDF, 307 KB
2016
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