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Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Pavlidis, Georges, Pavlidis, Spyridon, Heller, Eric R., Moore, Elizabeth A., Vetury, Ramakrishna, Graham, SamuelVolume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2625264
Date:
January, 2017
File:
PDF, 1.58 MB
english, 2017