[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor
Hentschel, Rico, Wachowiak, Andre, Groser, Andreas, Jahn, Andreas, Merkel, Ulrich, Wille, Ada, Kalisch, Holger, Vescan, Andrei, Schmult, Stefan, Mikolajick, ThomasYear:
2016
DOI:
10.1109/ASDAM.2016.7805882
File:
PDF, 511 KB
2016