Sub-Micron Gate Length Field Effect Transistors as Broad...

International Journal of High Speed Electronics and Systems 2016 / 09 Vol. 25; Iss. 3n4

Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

Delgado Notario, J. A., Javadi, E., Calvo-Gallego, J., Diez, E., Velázquez, J. E., Meziani, Y. M., Fobelets, K.
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Volume:
25
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156416400206
Date:
September, 2016
File:
PDF, 1.81 MB
english, 2016
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