N–H related defect playing the role of acceptor in GaAsN...

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N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy

Elleuch, Omar, Wang, Li, Lee, Kan-Hua, Ikeda, Kazuma, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, Masafumi
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Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.12.015
Date:
December, 2016
File:
PDF, 343 KB
english, 2016
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