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Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N2O gas
Enta, Yoshiharu, Wada, Makoto, Arita, Mariko, Takami, TakahiroLanguage:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.10.025
Date:
October, 2016
File:
PDF, 1.33 MB
english, 2016