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Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack
Nagatomi, Yuta, Tateyama, Tomoki, Tanaka, Shintaro, Wen, Wei-Chen, Sakaguchi, Taisei, Yamamoto, Keisuke, Zhao, Liwei, Wang, Dong, Nakashima, HiroshiLanguage:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.11.014
Date:
November, 2016
File:
PDF, 1.11 MB
english, 2016