Study of silicon n- and p-FET SOI nanowires concerning...

Solid-State Electronics 2017 / 02 Vol. 128

Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K

Paz, Bruna Cardoso, Cassé, Mikaël, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo Antonio
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Volume:
128
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.10.023
Date:
February, 2017
File:
PDF, 1.29 MB
english, 2017
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