Simulation study of 14-nm-gate III-V trigate field effect...

AIP Advances 2015 / 06 Vol. 5; Iss. 6

Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In 1− x Ga x As channel capping layer

Huang, Cheng-Hao, Li, Yiming
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Volume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4922190
Date:
June, 2015
File:
PDF, 8.20 MB
english, 2015
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