Probing defect states in polycrystalline GaN grown on...

Journal of Applied Physics 2017 / 01 Vol. 121; Iss. 1

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Hsiao, F.-M., Schnedler, M., Portz, V., Huang, Y.-C., Huang, B.-C., Shih, M.-C., Chang, C.-W., Tu, L.-W., Eisele, H., Dunin-Borkowski, R. E., Ebert, Ph., Chiu, Y.-P.
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Volume:
121
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4972563
Date:
January, 2017
File:
PDF, 1.71 MB
english, 2017
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