Structure of interfaces in GaN/AlN and Ge/Si multilayered...

Journal of Physics Conference Series 2016 / 11 Vol. 774

Structure of interfaces in GaN/AlN and Ge/Si multilayered heterosystems by XAFS spectroscopy

Erenburg, S B, Trubina, S V, Zhuravlev, K S, Malin, T V, Zinovyev, V A, Dvurechenskii, A V, Kuchinskaya, P A, Kvashnina, K O
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Volume:
774
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/774/1/012128
Date:
November, 2016
File:
PDF, 817 KB
english, 2016
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