Defects, strain relaxation, and compositional grading in...

Journal of Applied Physics 2015 / 10 Vol. 118; Iss. 15

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Bazioti, C., Papadomanolaki, E., Kehagias, Th., Walther, T., Smalc-Koziorowska, J., Pavlidou, E., Komninou, Ph., Karakostas, Th., Iliopoulos, E., Dimitrakopulos, G. P.
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Volume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4933276
Date:
October, 2015
File:
PDF, 3.35 MB
english, 2015
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