High-performance enhancement-mode Al 2 O 3 /InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology
Zhang, Kai, Kong, Cen, Zhou, Jianjun, Kong, Yuechan, Chen, TangshengVolume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.024101
Date:
February, 2017
File:
PDF, 774 KB
english, 2017