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Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al 2 O 3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
Ma, Zhongyuan, Wang, Wen, Yang, Huafeng, Jiang, Xiaofan, Yu, Jie, Qin, Hua, Xu, Ling, Chen, Kunji, Huang, Xinfan, Li, Wei, Xu, Jun, Feng, DuanVolume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4942160
Date:
February, 2016
File:
PDF, 2.14 MB
english, 2016