Bias-illumination stress effect in thin film transistors...

Semiconductor Science and Technology 2016 / 10 Vol. 31; Iss. 10

Bias-illumination stress effect in thin film transistors with a nitrogen low-doped IZO active layer

Cheremisin, Alexander B, Kuznetsov, Sergey N, Stefanovich, Genrikh B
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/10/105011
Date:
October, 2016
File:
PDF, 2.37 MB
english, 2016
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