Highly strained Esaki tunnel diodes on InP substrate with...

Semiconductor Science and Technology 2016 / 12 Vol. 31; Iss. 12

Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment

Karl, S, Sprengel, S, Amann, M-C
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/12/125008
Date:
December, 2016
File:
PDF, 959 KB
english, 2016
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