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Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology
Ros, Onintza, Pargon, Erwine, Fouchier, Marc, Gouraud, Pascal, Barnola, SebastienVolume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4972228
Date:
March, 2017
File:
PDF, 3.39 MB
english, 2017