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Preparation and effects of post-annealing temperature on the electrical characteristics of Li–N co-doped ZnSnO thin film transistors
Dai, Shiqian, Wang, Tao, Li, Ran, Zhou, Dongzhan, Peng, Yunfei, Wang, Hailong, Zhang, Xiqing, Wang, YongshengVolume:
43
Language:
english
Journal:
Ceramics International
DOI:
10.1016/j.ceramint.2016.12.145
Date:
April, 2017
File:
PDF, 523 KB
english, 2017