Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization
Lee, Sung Bo, Ju, Jin-Woo, Kim, Young-Min, Yoo, Seung Jo, Kim, Jin-Gyu, Han, Heung Nam, Lee, Dong NyungVolume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4927770
Date:
July, 2015
File:
PDF, 9.42 MB
english, 2015