A 0.9-μm² 1T1R Bit Cell in 14-nm High-Density Metal Fuse Technology for High-Volume Manufacturing and In-Field Programming
Chen, Zhanping, Kulkarni, Sarvesh H., Dorgan, Vincent E., Rajarshi, Salil Manohar, Jiang, Lei, Bhattacharya, UddalakVolume:
52
Language:
english
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/JSSC.2016.2641955
Date:
April, 2017
File:
PDF, 4.04 MB
english, 2017