Output power enhancement in AlGaN/GaN heterostructure...

Applied Physics Express 2017 / 01 Vol. 10; Iss. 1

Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

Oh, Seung Kyu, Jang, Taehoon, Pouladi, Sara, Jo, Young Je, Ko, Hwa-Young, Ryou, Jae-Hyun, Kwak, Joon Seop
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Volume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.016502
Date:
January, 2017
File:
PDF, 680 KB
english, 2017
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