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AlGaN channel field effect transistors with graded...

Applied Physics Letters 2016 / 09 Vol. 109; Iss. 13

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Bajaj, Sanyam, Akyol, Fatih, Krishnamoorthy, Sriram, Zhang, Yuewei, Rajan, Siddharth
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Volume:
109
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4963860
Date:
September, 2016
File:
PDF, 1.46 MB
english, 2016
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