TiSi(Ge) Contacts Formed at Low Temperature Achieving...

IEEE Transactions on Electron Devices 2017 / 2 Vol. 64; Iss. 2

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

Yu, Hao, Schaekers, Marc, Zhang, Jian, Wang, Lin-Lin, Everaert, Jean-Luc, Horiguchi, Naoto, Jiang, Yu-Long, Mocuta, Dan, Collaert, Nadine, De Meyer, Kristin
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2642888
Date:
February, 2017
File:
PDF, 2.30 MB
english, 2017
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