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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers
Yacoub, H., Mauder, C., Leone, S., Eickelkamp, M., Fahle, D., Heuken, M., Kalisch, H., Vescan, A.Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2647841
Date:
March, 2017
File:
PDF, 1.55 MB
english, 2017