Nature of traps responsible for the memory effect in...

Applied Physics Letters 2016 / 08 Vol. 109; Iss. 6

Nature of traps responsible for the memory effect in silicon nitride

Gritsenko, V. A., Perevalov, T. V., Orlov, O. M., Krasnikov, G. Ya.
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Volume:
109
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4959830
Date:
August, 2016
File:
PDF, 790 KB
english, 2016
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