Ge doping of GaN beyond the Mott transition

Journal of Physics D Applied Physics 2016 / 11 Vol. 49; Iss. 44

Ge doping of GaN beyond the Mott transition

Ajay, A, Schörmann, J, Jiménez-Rodriguez, M, Lim, C B, Walther, F, Rohnke, M, Mouton, I, Amichi, L, Bougerol, C, Den Hertog, M I, Eickhoff, M, Monroy, E
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Volume:
49
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/49/44/445301
Date:
November, 2016
File:
PDF, 2.18 MB
english, 2016
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