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1200 V FS-IGBT with electric field modulation layer to improve trade-off between avalanche ruggedness and on-state voltage drop
Yang, Zhuo, Bian, Fangjuan, Zhu, Jing, Sun, Weifeng, Tian, Ye, Tong, Xin, Zhu, Yuanzheng, Ye, PengVolume:
53
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2016.3833
Date:
January, 2017
File:
PDF, 362 KB
english, 2017