A New Quality Metric for III–V/High-k MOS Gate Stacks Based...

IEEE Electron Device Letters 2017 / 3 Vol. 38; Iss. 3

A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

Vais, Abhitosh, Franco, Jacopo, Martens, Koen, Lin, Dennis, Sioncke, Sonja, Putcha, Vamsi, Nyns, Laura, Maes, Jan, Xie, Qi, Givens, Michael, Tang, Fu, Jiang, Xiaoqiang, Mocuta, Anda, Collaert, Nadine,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2657794
Date:
March, 2017
File:
PDF, 810 KB
english, 2017
Conversion to is in progress
Conversion to is failed